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Tips & Tricks

Ignition Issues

It is common to experience plasma ignition failures. Common remedies include increasing the chamber pressure during the ignition step and then reducing the pressure to the process level in the PreClean and/or Dep step. For instance, set the ignition step pressure to 10 mTorr or 30 mTorr, then lower the pressure to 3 mTorr during deposition to keep the plasma ignited.

Materials Table (Sputter 3)

The recipes below are starting points based on data collected in the nanofab. Calibration is recommended for critical depositions.

Material	P(mT)	Power Source	Pow(W)	Sub(W)	T(C)	Ar	N2	O2	Height-Tilt(mm)	Rate(nm/min)	Stress(MPa)	Rs(uOhm-cm)	n@633nm	k@633nm	Comments
Au	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Set: 200 W Read: 400 VDC
Al2O3	3	200 (RF2)	off	20	30	-	-	-	1.5	1.52"-4mm	5.32	1.	0	no	Demis D. John

Height Conversion for Older Recipes

Old recipes using the manual height setting in millimeters can be converted to the new programmatic settings in inches as follows:

Old (mm)	New (inches)	Typical Gun Tilt (mm)
15	-	-
25	0.82	9
44	1.52	4

Interpolation plot can be found here.

Fe and Co Deposition (Sputter 3)

Cu Deposition (Sputter 3)

Mo Deposition (Sputter 3)

Ni and Ta Deposition (Sputter 3)

SiO2 Deposition (Sputter 3)

SiN Deposition (Sputter 3)

Ti Deposition (Sputter 3)

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Materials Table (Sputter 4)

The recipes below are starting points from data obtained in the nanofab. Calibration is recommended for critical depositions.

Material	P(mT)	Power Source	Pow(W)	Sub(W)	T(C)	Ar	N2	O2	Height-Tilt(mm)	Rate(nm/min)	Stress(MPa)	Rs(uOhm-cm)	n@633nm	k@633nm	Comments
Al	5	-	200	0	20	45	0	0	H2.75-T5	4.4	-	-	-	-	yes

Au Deposition (Sputter 4)

Al Deposition (Sputter 4)

Al2O3 Deposition (Sputter 4)

• Rate: 5.134 nm/min
• Cauchy Refractive Index Params (fit from λ=190-nm, indicating transparency over this range)
  • A = 1.626
  • B = 5.980E-3
  • C = 1.622E-4

Pt Deposition (Sputter 4)

Ru Deposition (Sputter 4)

Ti-Au Deposition (Sputter 4)

TiO2 Deposition (Sputter 4)

TiW Deposition (Sputter 4)

W-TiW Deposition (Sputter 4)

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Materials Table (Sputter 5)

The recipes below are starting points from data obtained in the nanofab. Calibration is recommended for critical depositions.

Material	P(mT)	Power Source	Pow(W)	Sub(V)	T(C)	Ar	N2	O2	Height-Tilt(mm)	Rate(nm/min)	Stress(MPa)	Rs(uOhm-cm)	Rq(nm)	n@633nm	k@633nm	LPDb/LPDa*	Comments
Al	5	-	250	0	20	45	0	0	H1-T10	2.5	22	-	-	-	no (SEM available)

SiO2 Deposition (Sputter 5)

Ion-Beam Assisted Deposition - high density reactive sputtering for dielectric film stacks, utilizing angled/rotating fixtures.

• Method to calibrate multi-layer optical films: For example, for calibrating and depositing Multi-layer DBR gratings, Anti-Reflection coatings, etc.

IBD Process Control Plots - Plots of all process control data.

SiO2 deposition (IBD)

SiO2 Thin-Film Properties (IBD)

• Dep. rate: 5.2 nm/min (users must calibrate this prior to critical deposits)
• HF Etch Rate ~350 nm/min
• Stress: -390MPa (compressive)
• Refractive Index: 1.494
• Cauchy Parameters (350-nm):
  • A = 1.480
  • B = 0.
  • C = -3.e-5

SiO2 Uniformity

Measured in June (Demis D. John)

Uniformity Statistics

Thickness (nm)	Refractive Index (at 632nm)
Mean (Avg.), nm	0.80	1.480
Min	0.09	1.479
Max	0.90	1.482
Std. Deviation (nm)	5.99	8.6e-4

Credit: Demis D. John

Si3N4 deposition (IBD)

Si3N4 Thin-Film Properties (IBD)

• Deposition Rate: 4.10 nm/min (users must calibrate this prior to critical deposits)
• HF Etch Rate: ~11nm/min
• Stress: -MPa (compressive)
• Refractive Index: 1.969
• Cauchy Parameters (350-nm):
  • A = 2.000
  • B = 0.
  • C = 1.e-4

Ta2O5 deposition (IBD)

Ta2O5 Thin-Film Properties (IBD)

• Ta2O5 1hr depositions:
• Deposition Rate: 7.8 nm/min (users must calibrate this prior to critical deposits)
• HF Etch Rate: 2 nm/min
• Stress: -232MPa (compressive)
• Refractive Index: 2.172
• Cauchy Parameters (350-nm):
  • A = 2.
  • B = 0.
  • C = -0.

Al2O3 deposition (IBD)

• Al2O3 [IBD] Standard Recipe - "1_Al2O3_dep"
• Al2O3 [IBD] Process Control Data

Al2O3 Thin-Film Properties (IBD)

• Deposition Rate: 2.05nm/min (users must calibrate this prior to critical deposits)
• HF etch rate: 167nm/min
• Stress: -332MPa (compressive)
• Refractive Index: 1.656
• Cauchy Parameters (350-nm):
  • A = To Be Added
  • B =
  • C =
• Absorbing < ~350nm

TiO2 deposition (IBD)

TiO2 Thin-Film Properties (IBD)

• Deposition Rate: 1.29 nm/min (users must calibrate this prior to critical deposits)
• HF etch rate: ~5.34nm/min
• Stress: -445MPa (compressive)
• Refractive Index: 2.259
• Cauchy Parameters (350-nm):
  • A = 2.435
  • B = -4.e-4
  • C = 0.
• Absorbing < ~350nm wavelength

SiOxNy deposition (IBD)

These are some old initial characterizations. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, improving repeatability by moving away from the low-flow limit of the MFC's. Data provided by Demis D. John.

Standard Cleaning Procedure (IBD)

Edit the "#_GridClean"("#" is your group number) steps in your Process according to the following times:

• 5min GridClean for 1hr or less deposition
• 10min GridClean for up to 2hrs of deposition.
• Do not deposit for longer than 2hrs - instead, break your Process into multiple 2-hr subroutines with cleans in between. See the recipe "1_SiO2_Dep_Multi" for an example.

Standard Grid-Clean Recipe

To Be Added

This Tool has been Disabled, and is not available for use anymore! These recipes are displayed here for historical/reference purposes only.

Al Deposition (Sputter 2)

AlNx Deposition (Sputter 2)

Au Deposition (Sputter 2)

TiO2 Deposition (Sputter 2)

Silicon Dioxide (SiO2) Sputtering Targets, Fused Quartz